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Proceedings Paper

Evaluation of EUV resists for 5nm technology node and beyond
Author(s): Zuhal Tasdemir; Xiaolong Wang; Iacopo Mochi; Lidia van Lent-Protasova; Marieke Meeuwissen ; Rolf Custers; Gijsbert Rispens; Rik Hoefnagels; Yasin Ekinci
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Paper Abstract

For more than a decade, the semiconductor manufacturing industry has anticipated the introduction of Extreme Ultraviolet Lithography (EUVL) into high-volume manufacturing (HVM). The readiness of the supporting EUV resists is one of the requirements for HVM. While the industry is planning to introduce EUVL into HVM at 7 nm node, it is important to address the availability of the resists for future generations and in particular for the high-NA EUVL which will have the patterning capability down to 8 nm half-pitch. In this study we report on the performance of promising EUV resists evaluated by EUV interference lithography (EUV-IL) at the Swiss Light Source (SLS) at the Paul Scherrer Institut (PSI). We evaluated EUV resists that are being developed as candidate materials for future technology nodes and we assessed their potential for high-NA EUV lithography. Several new chemically-amplified resists (CARs) and non-CAR resists have been investigated with the aim to resolve patterns down to 10 nm hp. While, up to now, CARs performance reached down to 13 nm half pitch (hp) only, we report about a recent CAR that can partially resolve lines down to 11 nm hp. Moreover, some other non-CAR resists have achieved resolutions down to 10 nm. We evaluated essential parameters, such as critical dimension (CD) and line edge roughness as a function of dose and we estimated the exposure latitude (EL). Furthermore, we report on the ultimate extendibility of CAR platform materials in manufacturing, and on novel resist platforms developed to address the challenges in the patterning at hp ≤ 10 nm.

Paper Details

Date Published: 26 October 2018
PDF: 10 pages
Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108090L (26 October 2018); doi: 10.1117/12.2502688
Show Author Affiliations
Zuhal Tasdemir, Paul Scherrer Institut (Switzerland)
Xiaolong Wang, Paul Scherrer Institut (Switzerland)
Iacopo Mochi, Paul Scherrer Institut (Switzerland)
Lidia van Lent-Protasova, ASML Netherlands B.V. (Netherlands)
Marieke Meeuwissen , ASML Netherlands B.V. (Netherlands)
Rolf Custers, ASML Netherlands B.V. (Netherlands)
Gijsbert Rispens, ASML Netherlands B.V. (Netherlands)
Rik Hoefnagels, ASML Netherlands B.V. (Netherlands)
Yasin Ekinci, Paul Scherrer Institut (Switzerland)

Published in SPIE Proceedings Vol. 10809:
International Conference on Extreme Ultraviolet Lithography 2018
Kurt G. Ronse; Eric Hendrickx; Patrick P. Naulleau; Paolo A. Gargini; Toshiro Itani, Editor(s)

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