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Proceedings Paper

Theoretical analysis of band structure and material gain of InGaAs quantum wells in a semiconductor disk laser
Author(s): Lingling Hua; Heyang Guoyu; Peng Zhang; Jinrong Tian; Yanrong Song
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Paper Abstract

The band structure of InGaAs strained quantum wells are investigated using 8×8 Luttinger-Kohn Hamiltonian including conduction band, heavy hole, light hole, spin-orbit splitting and strain effects. The energy dispersion curves of conduction band and valence band, the material gain spectra of TE and TM mode are given, respectively. The variation of peak gain with carrier density, temperature, well width, and Indium composition of InGaAs are calculated. The calculations show that the higher the In composition of InGaAs and the thicker the well, the longer the emitting wavelength are. The higher carrier density and higher In composition lead to the higher peak gain.

Paper Details

Date Published: 6 November 2018
PDF: 9 pages
Proc. SPIE 10812, Semiconductor Lasers and Applications VIII, 108121D (6 November 2018); doi: 10.1117/12.2502641
Show Author Affiliations
Lingling Hua, Beijing Univ. of Technology (China)
North China Institute of Science and Technology (China)
Heyang Guoyu, Beijing Univ. of Technology (China)
Peng Zhang, Chongqing Normal Univ. (China)
Jinrong Tian, Beijing Univ. of Technology (China)
Yanrong Song, Beijing Univ. of Technology (China)

Published in SPIE Proceedings Vol. 10812:
Semiconductor Lasers and Applications VIII
Ning Hua Zhu; Werner H. Hofmann, Editor(s)

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