19x nm defect inspection is the strongest candidate for initial EUV production until high-throughput E-Beam or Actinic inspection is ready. However, EUV mask inspection on an optical, 19x nm wavelength tool has some difficulties compared to optical masks. The issue of varying base pattern contrast is an example of one such difficulty. This paper explores the defect sensitivity differences among the base pattern sizes, as well as the relationship between base pattern contrast and defect sensitivity. Focus offset and polarization adjustments on programmed defect test masks are used to create new inspection recipes.

Date Published: 12 June 2018
PDF: 8 pages
Proc. SPIE 10807, Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology, 108070D (12 June 2018); doi: 10.1117/12.2502006

Published in SPIE Proceedings Vol. 10807:
Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology
Kiwamu Takehisa, Editor(s)