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Proceedings Paper

Non‐Gaussian CD distribution characterization for DRAM application in EUV lithography
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Paper Abstract

We evaluate through simulations and experimental data the impact of process non-idealities with a particular attention to mask CD uniformity for 44 nm pitch DRAM contact hole array. Several millions of contact holes are simulated with PROLITH after full-physical stochastic process calibration. Process Windows, LCDU and failure rates are compared at nominal conditions, assuming no variation in process parameters vs. the stochastic process variation obtained by inclusion of perturbations of process parameters. The simulations are repeated including Gaussian distributed mask CD variations. Skewness, kurtosis, and failure rates are calculated..

Paper Details

Date Published: 3 October 2018
PDF: 10 pages
Proc. SPIE 10809, International Conference on Extreme Ultraviolet Lithography 2018, 108090A (3 October 2018); doi: 10.1117/12.2501820
Show Author Affiliations
Alessandro Vaglio Pret, KLA-Tencor Corp. (United States)
Inhwan Lee, SK Hynix, Inc. (Korea, Republic of)
Mijung Lim, SK Hynix, Inc. (Korea, Republic of)
David Blankenship, KLA-Tencor Corp. (United States)
Trey Graves, KLA-Tencor Corp. (United States)
Stewart A. Robertson, KLA-Tencor Corp. (United States)
John J. Biafore, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 10809:
International Conference on Extreme Ultraviolet Lithography 2018
Kurt G. Ronse; Eric Hendrickx; Patrick P. Naulleau; Paolo A. Gargini; Toshiro Itani, Editor(s)

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