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Proceedings Paper

Novel high-speed dual-wavelength InAlAs/InGaAs graded superlattice Schottky barrier photodiode for 0.8- and 1.3-um detection
Author(s): Kiu Chul Hwang; Sheng S. Li; Yung Chung Kao
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Paper Abstract

A new planar high-speed dual wavelength InAlAs/InGaAs Schottky barrier photodiode with graded superlattice structure is reported. In the detector structure, the top wide band gap n-In(0.52)Al(0.48)As epilayer absorbs photons in the visible to near infrared spectrum with the peak response occurring around 0.8 micron, and the bottom n-In(0.53)Ga(0.47)As epilayer absorbs photons in the 1.0 to 1.6 micron wavelength regime with the peak response occurring at 1.3 micron. The detector is capable of detecting and demultiplexing at both short and long wavelengths simultaneously without the complication of additional components. The response speed measured by the impulse response method is estimated to be about 3GHz.

Paper Details

Date Published: 1 February 1991
PDF: 10 pages
Proc. SPIE 1371, High-Frequency Analog Fiber Optic Systems, (1 February 1991); doi: 10.1117/12.24895
Show Author Affiliations
Kiu Chul Hwang, Univ. of Florida (United States)
Sheng S. Li, Univ. of Florida (United States)
Yung Chung Kao, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 1371:
High-Frequency Analog Fiber Optic Systems
Paul Sierak, Editor(s)

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