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Proceedings Paper

3D simulation of thin film growth conditions at ion beam sputter deposition and comparison to experimental investigations
Author(s): Markus Tilsch; Volker Scheuer; Jochen Biersack; Theo T. Tschudi
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Paper Abstract

A software tool for the simulation of ion beam sputter deposition is presented. All calculations are performed in 3D space using the original deposition chamber geometry. Starting at the extraction grid of the ion gun the distribution of the ion beam at the target is determined. A special version of transport of ions in matter code is applied to simulate the sputtering process. Using the energy and angular distribution of all sputtered and reflected atoms, the energy deposition as well as growth rates and particle compositions at any location and orientation in the deposition chamber can be calculated. Some experimental results of growth rates and optical absorption losses of SiO2 and TiO2 layers are presented and are compared to the results of simulation.

Paper Details

Date Published: 19 August 1996
PDF: 9 pages
Proc. SPIE 2775, Specification, Production, and Testing of Optical Components and Systems, (19 August 1996); doi: 10.1117/12.246794
Show Author Affiliations
Markus Tilsch, Technische Hochschule Darmstadt (Germany)
Volker Scheuer, Technische Hochschule Darmstadt (Germany)
Jochen Biersack, Hahn-Meitner-Institut (Germany)
Theo T. Tschudi, Technische Hochschule Darmstadt (Germany)

Published in SPIE Proceedings Vol. 2775:
Specification, Production, and Testing of Optical Components and Systems
Anthony E. Gee; Jean-Francois Houee, Editor(s)

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