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Proceedings Paper

Single-shot excimer laser annealing of PECVD amorphous silicon
Author(s): Pierre Boher; Dorian Zahorski; Sylvie Prochasson; Bruno Godard; Jean-Louis P. Stehle; Y. Suzuki; Akira Iwasaki
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Paper Abstract

In this paper, different aspects of this annealing process using Single Shot high power Excimer Laser Annealing technique are examined successively. The energy density is optimized using Spectroscopic Ellipsometry technique. The crystallinity and roughness of the layers are characterized in addition to the layer thickness. The interest of large size laser beam is examined more precisely measuring the crystallinity in the transition zone between two laser shots. Finally the homogeneity of the layer is checked electrically by mapping the surface of a laser shot with TFT characteristics.

Paper Details

Date Published: 16 August 1996
PDF: 4 pages
Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); doi: 10.1117/12.246244
Show Author Affiliations
Pierre Boher, SOPRA SA (France)
Dorian Zahorski, SOPRA SA (France)
Sylvie Prochasson, SOPRA SA (France)
Bruno Godard, SOPRA SA (France)
Jean-Louis P. Stehle, SOPRA SA (France)
Y. Suzuki, SEIKA Sangio Corp. (Japan)
Akira Iwasaki, SEIKA Sangio Corp. (Japan)

Published in SPIE Proceedings Vol. 2873:
International Symposium on Polarization Analysis and Applications to Device Technology
Toru Yoshizawa; Hideshi Yokota, Editor(s)

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