Share Email Print

Proceedings Paper

Spectroellipsometric study of sulphur passivation of InAs
Author(s): Tomuo Yamaguchi; K. Ohshimo; Ahalapitiya Hewage Jayatissa; M. Aoyama; X. Y. Gong; Toshihiko Makino; Hirofumi Kan
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Sulphur passivation of InAs is studied by spectroscopic ellipsometry. Time dependence of (Psi) and (Delta) of InAs surface after etching as well as after sulphur passivation has been measured in air. The empirical dielectric function for amorphous material proposed in the previous paper has been applied to the surface. Differences between dielectric function and thickness of surface layers with and without passivation and their time dependence after each treatment have clearly been observed.

Paper Details

Date Published: 16 August 1996
PDF: 4 pages
Proc. SPIE 2873, International Symposium on Polarization Analysis and Applications to Device Technology, (16 August 1996); doi: 10.1117/12.246242
Show Author Affiliations
Tomuo Yamaguchi, Shizuoka Univ. (Japan)
K. Ohshimo, Shizuoka Univ. (Japan)
Ahalapitiya Hewage Jayatissa, Shizuoka Univ. (Japan)
M. Aoyama, Shizuoka Univ. (Japan)
X. Y. Gong, Hamamatsu Photonics K.K. (Japan)
Toshihiko Makino, Hamamatsu Photonics K.K. (Japan)
Hirofumi Kan, Hamamatsu Photonics K.K. (Japan)

Published in SPIE Proceedings Vol. 2873:
International Symposium on Polarization Analysis and Applications to Device Technology
Toru Yoshizawa; Hideshi Yokota, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?