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Proceedings Paper

Characterization of picosecond GaAs metal-semiconductor-metal photodetectors
Author(s): Josef Rosenzweig; C. Moglestue; A. Axmann; Joachim Schneider; Axel Huelsmann; M. Lambsdorff; Juergen Kuhl; Markus Klingenstein; H. Leier; Alfred W. B. Forchel
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Paper Abstract

Interdigitated GaAs metalsemiconductormetal Schottky photodiodes have been studied experimentally and theoretically. The time evolution of the response current has been measured by means of photoconductive and electrooptic sampling with a time resolution of 0. 8 and 0. 3 ps respectively. The response current to a 70 fs laser pulse reaches maximum within 25 p5 then shows a fast decay of about 10 ps followed by a slower one. Selfconsistent twodimensional Monte Carlo particle simulation predicts that the former is due to electrons the latter to holes. With a sufficiently strong electric field the two species of carriers get separated. With increased light intensity a screened plasma forms that vanishes only through recombination which takes of the order of nanoseconds.

Paper Details

Date Published: 1 February 1991
PDF: 11 pages
Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); doi: 10.1117/12.24539
Show Author Affiliations
Josef Rosenzweig, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
C. Moglestue, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
A. Axmann, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Joachim Schneider, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Axel Huelsmann, Fraunhofer Institut fuer Angewandte Festkoerperphysik (Germany)
M. Lambsdorff, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Juergen Kuhl, Max-Planck-Institut fuer Festkoerperforschung (Germany)
Markus Klingenstein, Max-Planck-Institut fuer Festkoerperforschung (Germany)
H. Leier, Univ. Stuttgart (Germany)
Alfred W. B. Forchel, Univ. Stuttgart (Germany)

Published in SPIE Proceedings Vol. 1362:
Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications
Manijeh Razeghi, Editor(s)

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