Proceedings Paper
Development of advanced process for halftone phase-shift mask fabrication with electron-beam exposure systems| Format | Member Price | Non-Member Price |
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Paper Abstract
A new fabrication process for halftone phase-shift masks (HPSMs) with electron beam writers has been developed for mass production. It has a resist critical dimension (CD) measurement step before dry etching and it gives the determination of etching time using the relationships between CD shift (Chrome CD - resist CD) and overetch ratio. As a result, it shows a good mean CD controllability within a range of 0.03 μm for over 90% of our production HPSMs.
Paper Details
Date Published: 24 July 1996
PDF: 12 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996);
Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)
PDF: 12 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996);
Show Author Affiliations
Minoru Komada, Dai Nippon Printing Co., Ltd. (Japan)
Masa-aki Kurihara, Dai Nippon Printing Co., Ltd. (Japan)
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Masa-aki Kurihara, Dai Nippon Printing Co., Ltd. (Japan)
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Takamitsu Makabe, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)
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