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Proceedings Paper

Resolution enhancement with thin Cr for chrome mask making
Author(s): Byung-Cheol Cha; Seong-Woon Choi; Jin-Min Kim; Hanku Cho; Jung-Min Sohn
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Paper Abstract

The main issue for fabricating a conventional Cr Mask with e-beam exposure system is a resolution limitation. Required minimum Critical Dimension (CD) goes down to below 1.0 μm on 4 X reticle, sometimes down to below 0.5 μm for OPC pattern. The resist which widely used in E-beam lithography is positive tone PBS. PBS has used in wet chrome etching process with spin spray or dip methods, due to its lack of resistance to dry etch durability. However, the isotropic process of wet chrome etching results in undercutting of the chrome. Thus, undercut causes the differences of CD between after development and final mask image. The purpose of this study is to decrease undercutting so that CD error can be minimized and a lot of rooms for overdevelopment margin can be obtained. CD linearity in case of below 1.0 μm was also investigated in detail. For this study, the chrome thickness coated on 6 x 6 x 250 mil PBS chrome plates was reduced. As a result of our study, we found that overdevelopment is marginal for the same final CD when using the thinner Cr, due to undercutting reduced. Good CD uniformity has been also achieved with good CD linearity.

Paper Details

Date Published: 24 July 1996
PDF: 9 pages
Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996);
Show Author Affiliations
Byung-Cheol Cha, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Jin-Min Kim, Samsung Electronics Co., Ltd. (South Korea)
Hanku Cho, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 2793:
Photomask and X-Ray Mask Technology III
Hideo Yoshihara, Editor(s)

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