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Proceedings Paper

Novel GaP/InP strained heterostructures: growth, characterization,and technological perspectives
Author(s): Miguel Recio; Ana Ruiz; Juan Melendez; Jose Maria Rodriguez; Gaspar Armelles; Maria Luisa Dotor; Fernando Briones
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Paper Abstract

GaP/InP strained-layer superlattices (SLS) grown on GaAs substrates are a novel structure with a large lattice mismatch symmetrically shared (+ 3 . 7 (GaP) -3 . 6 (InP)). We present growth and characterization of two types of GaP/InP based heterostructures: i) isolated SLSs and ii) a SLS based QW confined by A1GaAs barriers. Growth by Atomic Layer MBE has allowed to combine P- and As-containing materials in a controllable way preserving flat interfaces at low substrate temperatures. Optical characterization oftheheterostructures ispresented and correlated with akp model obtaining the first estimation for the conduction band offset at the GaP/InP heteroj unction. All superlattices studied have been found to be spatially direct (type I) being this feature very promising for their use as active layer in a semiconductor QW laser. I.

Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24413
Show Author Affiliations
Miguel Recio, Ctr. Nacional de Microelectronica (Spain)
Ana Ruiz, Ctr. Nacional de Microelectronica (Spain)
Juan Melendez, Ctr. Nacional de Microelectronica (Spain)
Jose Maria Rodriguez, Ctr. Nacional de Microelectronica (Spain)
Gaspar Armelles, Ctr. Nacional de Microelectronica (Spain)
Maria Luisa Dotor, Ctr. Nacional de Microelectronica (Spain)
Fernando Briones, Ctr. Nacional de Microelectronica (Spain)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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