
Proceedings Paper
Nonlinear optical properties of nipi and hetero nipi superlattices and their application for optoelectronicsFormat | Member Price | Non-Member Price |
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Paper Abstract
The spatial separation of electrons and holes in n-i-p--i doping superlattices results
in large built-in space charge fields and low recombination rates. Due to the long
recombination lifetimes a high density electron hole plasma can be generated by
extremely low power optical excitation. This electron hole plasma induces large changes
of the optical properties first by excitonic screening and band-filling and second by
reduction of the space charge fields. The amount of the non-linearity of a typical
n-i-p-i crystal may excceed that of bulk or multiple quantum well semiconductors by
many orders of magnitude. In this paper we emphasize on further improvements of
the genuine favorable non- linearities of n-i-p-i systems by using "hetero n-i-p-i"
systems and by applying an external reverse bias by means of selective n- and p-type
contacts. Thus, the changes of the optical properties can become even larger. Also,
they depend almost linearly on the optical power within a wide range. Finally, the
recovery time can be externally adjusted within the range from sub-nanoseconds to
seconds, a property which is of particular significance for photonics. Some examples
for the application of the nonlinearity and optical bistability of n-i-p-i superlattices
will be discussed.
Paper Details
Date Published: 1 March 1991
PDF: 26 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24375
Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)
PDF: 26 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24375
Show Author Affiliations
Gottfried H. Doehler, Univ. of Erlangen-Nuernberg (Germany)
Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)
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