The optical response of conduction electrons in a superlattice is presented. The time response of electron tunneling through a double barrier is examined with the time dependent Schroedinger''s equation. The energy states of a silicon quantuirt box are calculated with the use of a variational procedure for a spherical box. The regions of applicability of the band-model and the hoppingmodel for negative differential conductivity are discussed. And finally sonie problems involv ing phase rardoraization and inelastic scatterings with the presence of attractive o repulsive elastic scattering centers in a confined re gion are discussed.

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24369

Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)