We systematically studied the Ga3d and A12p cation core level binding energies in molecular beam epitaxially grown GaAs/AlAs heterostructures by in-situ x-ray photoemission spectroscopy. The valence band offset v at GaAs/AlAs interfaces is found to be independent of the crystallographic orientation and determined to be 0. 44 0. 05 eV. Furthermore we found that the cation core level binding energies in the extreme vicinity of the interface are shifted by -0. 1 eV from their respective bulk values which clearly indicates that the charge distribution and the resulting band offsets have a transient over a distance of at least 2 monolayers from the heterointerface.

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24361

Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)