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Proceedings Paper

Monolithic integration of InGaAs/InP JFET/detectors for NIR imaging applications
Author(s): Michael J. Lange; Dong-Su Kim; Stephen R. Forest; Walter F. Kosonocky; Nicholas A. Doudoumopoulos; Marshall J. Cohen; Gregory H. Olsen
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Paper Abstract

Monolithic arrays of InP JFET switches and InGaAs detectors have been demonstrated with unprecedented JFET leakages below 20 pA. Improvements in the JFET dark current resulted from reduced device geometry along with the use of a novel reversed bias p-n junction. Successful devices have been made both with OMVPE and gas source MBE crystal. Other impressive results with column-switched 16 X 16 element arrays include detector leakages below 1 nA, 70 percent quantum efficiency from 1.0 - 1.65 micrometers and ON/OFF ratios beyond 70 db.

Paper Details

Date Published: 26 June 1996
PDF: 14 pages
Proc. SPIE 2745, Infrared Readout Electronics III, (26 June 1996); doi: 10.1117/12.243540
Show Author Affiliations
Michael J. Lange, Sensors Unlimited, Inc. (United States)
Dong-Su Kim, Princeton Univ. (United States)
Stephen R. Forest, Princeton Univ. (United States)
Walter F. Kosonocky, New Jersey Institute of Technology (United States)
Nicholas A. Doudoumopoulos, Photobit (United States)
Marshall J. Cohen, Sensors Unlimited, Inc. (United States)
Gregory H. Olsen, Sensors Unlimited, Inc. (United States)

Published in SPIE Proceedings Vol. 2745:
Infrared Readout Electronics III
Eric R. Fossum, Editor(s)

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