Interdiffusion between epitaxial layers of (Hg,Cd)Te of unequal composition (in the limit, HgTe and CdTe) gives rise to non-abrupt interfaces in heterostructure devices composed of these materials. In this paper, it is proposed that a strained ZnTe barrier layer, interposed at such a heterointerface, may inhibit interdiffusion. Initial results obtained from a CdTe-ZnTe-HgCdTe test structure grown by MOVPE at 325°C are presented. TEM observations and electron microprobe measurements indicate that distinct interfaces are maintained.

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24340

Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)