Proceedings Paper
Photoluminescence and surface photovoltaic spectra of strained InP on GaAs by MOCVD| Format | Member Price | Non-Member Price |
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Paper Abstract
A high energy shift of the band-band recombination has been observed in the PL spectra of the strained InP epilayer on GaAs by MOCVD. The strain determined by PL peak is in good agreement with calculated thermal strain. The surface photovoltalic spectra gives the informations about energy gap lattice mismatching and composition of heteroepilayers diffusion length surface and interface recombination velocity of minority carriers of heteroepitaxy layers.
Paper Details
Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24325
Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)
PDF: 7 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24325
Show Author Affiliations
Weihua Zhuang, Institute of Semiconductors and Univ. of Science and Technol (China)
Chaoyang Chen, Institute of Semiconductors and Xiamen Univ. (China)
Da Teng, Institute of Semiconductors (China)
Chaoyang Chen, Institute of Semiconductors and Xiamen Univ. (China)
Da Teng, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)
Yuzhang Li, Institute of Semiconductors (China)
Yuzhang Li, Institute of Semiconductors (China)
Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)
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