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Proceedings Paper

Experimental results from 32 x 32 CMOS photogate and photodiode active pixel image sensors
Author(s): Johannes Solhusvik; Cyril Cavadore; Jean A. Farre
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Paper Abstract

In this paper we present results from measurements on a recently developed CMOS integrated circuit containing three Active Pixel Image Sensors (APS) with 32 X 32 pixels. The chip has been developed using a standard CMOS DLP/DLM 1.2 micrometers process line from Austria Micro Systems. Two of the APS image sensors use photogate pixels and the third uses photodiodes. A series of measurements, including quantum efficiency, conversion gain, read noise, fixed pattern noise, linearity, uniformity and dark current rates, have been carried out in order to compare the detector performance between CMOS-APS photodiode and photogate pixels. The obtained results confirm that APS detector performance is comparable to Charge-coupled devices.

Paper Details

Date Published: 14 June 1996
PDF: 11 pages
Proc. SPIE 2749, Photonic Component Engineering and Applications, (14 June 1996); doi: 10.1117/12.243108
Show Author Affiliations
Johannes Solhusvik, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)
Cyril Cavadore, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)
Jean A. Farre, Ecole Nationale Superieure de l'Aeronautique et de l'Espace (France)


Published in SPIE Proceedings Vol. 2749:
Photonic Component Engineering and Applications
Andrew R. Pirich, Editor(s)

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