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Proceedings Paper

Deep levels in III-V compounds, heterostructures, and superlattices
Author(s): Jacques C. Bourgoin; S. L. Feng; H. J. von Bardeleben
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Paper Abstract

We first show how the characteristical properties of defects (energy level capture cross-sections) in systems such as single heterostructures and superlattices can be deduced from the corresponding properties in a bulk material. Concluding that these characteristics can be obtained once the band structure of the system is known we discuss as illustration the problems encountered with the two principal defects present in GaAs and related alloys namely the EL2 defect and the DX center.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); doi: 10.1117/12.24309
Show Author Affiliations
Jacques C. Bourgoin, Univ. Paris VII (France)
S. L. Feng, Univ. Paris VII (France)
H. J. von Bardeleben, Univ. Paris VII (France)


Published in SPIE Proceedings Vol. 1361:
Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization
Manijeh Razeghi, Editor(s)

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