Proceedings Paper
Charge transfer in (In,Ga)As/(In,Al)As asymmetric double-multiple-quantum-well structures| Format | Member Price | Non-Member Price |
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Paper Abstract
We present the results of an experimental investigation of field-dependent space-charge build-up in (Ga,In)As/(Al,In)As asymmetric double quantum well structures. By using low- temperature photoluminescence spectroscopy, we have found that charge separation dramatically increases the magnitude of the applied field required to achieve resonance (and beyond) of the lowest allowed electron levels in the narrow and wide wells.
Paper Details
Date Published: 14 June 1996
PDF: 5 pages
Proc. SPIE 2749, Photonic Component Engineering and Applications, (14 June 1996);
Published in SPIE Proceedings Vol. 2749:
Photonic Component Engineering and Applications
Andrew R. Pirich, Editor(s)
PDF: 5 pages
Proc. SPIE 2749, Photonic Component Engineering and Applications, (14 June 1996);
Show Author Affiliations
Clifford R. Pollock, Cornell Univ. (United States)
Published in SPIE Proceedings Vol. 2749:
Photonic Component Engineering and Applications
Andrew R. Pirich, Editor(s)
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