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Proceedings Paper

Photoelectric memory in GaAs/AlGaAs quantum well infrared photodetectors
Author(s): Michail A. Dem'yanenko; Victor N. Ovsyuk; Valerii V. Shashkin; Aleksandr I. Toropov
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Paper Abstract

GaAs/AlxGa1-xAs quantum well infrared photodetectors grown by molecular-beam epitaxy with x varied from 0.26 up to 0.43 are investigated. The huge increase of dark current (by 2 - 3 orders) in photodetectors with x approximately equals 0.4 after illumination of samples by optical radiation ((lambda) < 1.3 micrometers ) at lowered temperatures and the subsequent slow dark current relaxation are observed. The model of barriers with a local sag potential increasing tunnel current is proposed. The value of the sag potential is increased at optical ionization of unintentional deep levels in the barrier and is decreased at the subsequent capture of electrons from conduction band on deep levels. Analysis of the dark current kinetics allowed to determine some parameters of these deep levels.

Paper Details

Date Published: 17 June 1996
PDF: 8 pages
Proc. SPIE 2746, Infrared Detectors and Focal Plane Arrays IV, (17 June 1996); doi: 10.1117/12.243037
Show Author Affiliations
Michail A. Dem'yanenko, Institute of Semiconductor Physics (Russia)
Victor N. Ovsyuk, Institute of Semiconductor Physics (Russia)
Valerii V. Shashkin, Institute of Semiconductor Physics (Russia)
Aleksandr I. Toropov, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 2746:
Infrared Detectors and Focal Plane Arrays IV
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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