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Proceedings Paper

Enhanced i-line lithography using AZ BARLi coating
Author(s): T.-S. Yang; Taeho H. Kook; W. A. Josephson; Mark A. Spak; Ralph R. Dammel
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Paper Abstract

A combined wet/dry develop process using AZR 7800 resist is described which achieves final resolution of 0.25 micrometer lines and spaces after transfer into the semiconductor substrate. The process utilizes AZR BARLiTM bottom coating both as an antireflective and as an etch enhancement layer. Features which are not resolved after the wet development step can be transferred linearly in the dry development step, which allows the introduction and removal of lithographic bias in a feature-size independent way. The resist process used employs very short bake times at high temperatures to achieve improved resist densification, which leads to substantial gains in thermal stability.

Paper Details

Date Published: 14 June 1996
PDF: 14 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241871
Show Author Affiliations
T.-S. Yang, AT&T Bell Labs. (United States)
Taeho H. Kook, AT&T Bell Labs. (United States)
W. A. Josephson, AT&T Bell Labs. (United States)
Mark A. Spak, Hoechst Celanese Corp. (United States)
Ralph R. Dammel, Hoechst Celanese Corp. (United States)

Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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