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Proceedings Paper

Highly absorbing ARC for DUV lithography
Author(s): Edward K. Pavelchek; James D. Meador; Douglas J. Guerrero; James E. Lamb III; Ajit Kache; Manuel doCanto; Timothy G. Adams; David R. Stark; Daniel A. Miller
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Paper Abstract

The properties of a new anti-reflective coating for 248 nm lithography are described. It is formed by thermally cross-linking a spin-on organic coating, and has an absorbance greater than 12/micrometers. It is compatible with UVIIHS and APEX-E photoresists. Thin films (less than 600 angstrom over silicon substrates) are found to completely suppress standing waves, to reduce EO swing curves to less than 3%, and to offer good CD control over typical field oxide topography. The etch rate was found to be comparable to that of the APEX-E photoresist.

Paper Details

Date Published: 14 June 1996
PDF: 8 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241867
Show Author Affiliations
Edward K. Pavelchek, Shipley Co. Inc. (United States)
James D. Meador, Brewer Science Inc. (United States)
Douglas J. Guerrero, Brewer Science Inc. (United States)
James E. Lamb III, Brewer Science Inc. (United States)
Ajit Kache, Brewer Science Inc. (United States)
Manuel doCanto, Shipley Co. Inc. (United States)
Timothy G. Adams, Shipley Co. Inc. (United States)
David R. Stark, SEMATECH (United States)
Daniel A. Miller, SEMATECH (United States)

Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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