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Proceedings Paper

Stable process for chemically amplified resists using a new adhesion promotor
Author(s): Masayuki Endo; Satoko Kawasaki; Akiko Katsuyama
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Paper Abstract

We have developed a stable process for chemically amplified resists against the airborne contamination using a new adhesion promoter. The new adhesion promoter does not produce ammonia when it decomposes and its trimethylsilyl group adheres to a substrate. We have applied this new adhesion promoter to KrF excimer laser lithography. The excellent 0.30 micrometer pattern profiles were achieved without skin-layer or T-top profiles after leaving the exposed wafer in the atmosphere of the new adhesion promoter for 15 minutes before PEB. We also found that the adhesion strength of the new adhesion promoter to a substrate is as good as the conventional adhesion promotor and obtained large depth of focus latitude using the new adhesion promoter.

Paper Details

Date Published: 14 June 1996
PDF: 10 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241813
Show Author Affiliations
Masayuki Endo, Matsushita Electric Industries Co., Ltd. (Japan)
Satoko Kawasaki, Matsushita Electronics Corp. (Japan)
Akiko Katsuyama, Matsushita Electric Industries Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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