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Proceedings Paper

Substrate effects of silicon nitride on i-line and deep-UV lithography
Author(s): Byeong-Chan Kim; Hoon Huh; Jaejeong Kim
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Paper Abstract

Thin films of silicon nitride (Si3N4) which has been taking a crucial role as an etch or oxidation barrier specially in the local oxidation of silicon (LOCOS) process affect optical lithographic performances seriously. In this study, substrate effects of Si3N4 were delved through two kinds of points of view. Thin films underlying below the photoresist have induced thin-film interference effects which have caused in turn the degradation of the fidelity of the pattern transfer in i-line lithography. Recently, the chemically amplified resists mainly applied in DUV lithography have been revealed vulnerable to the chemical contamination from the substrate as well as the optical disturbances. We investigated the substrate effects of Si3N4 thin films which represent the optical and the chemical effects simultaneously to the chemically amplified resists, in which the optical aspect and the chemical influences were studied separately. Consequently, we determined the optimum thickness of Si3N4 substrate to reduce the thin-film interference effects and contrived the favorable methods for the chemical passivation of Si3N4 substrate which was confirmed to be effective with the quantification of chemical state at the surface.

Paper Details

Date Published: 14 June 1996
PDF: 12 pages
Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241811
Show Author Affiliations
Byeong-Chan Kim, LG Semicon Co., Ltd. (South Korea)
Hoon Huh, LG Semicon Co., Ltd. (South Korea)
Jaejeong Kim, LG Semicon Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 2724:
Advances in Resist Technology and Processing XIII
Roderick R. Kunz, Editor(s)

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