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Proceedings Paper

Effect of numerical aperture and partial coherence to the resist sidewall angle
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Paper Abstract

The modeling of the resist development is an important tool in the study of lithography. Many papers reported the importance of the develop rate change near the resist surface, but Mack's lumped parameter model ignored the develop rate change near the resist surface and they treated the absorption coefficient as a constant. We included the resist surface effect by changing the absorption coefficient as a function of resist depth and we can predict more realistic resist sidewall angle near the resist surface. We also noticed that the resist sidewall angle can be changed by numerical aperture and partial coherence variation. Higher numerical aperture and smaller partial coherence give not only better resolution at the resist bottom, but also more vertical sidewall angle around the resist surface.

Paper Details

Date Published: 7 June 1996
PDF: 11 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240976
Show Author Affiliations
Hye-Keun Oh, Hanyang Univ. (South Korea)
Byoung Sub Nam, Hanyang Univ. (South Korea)
So-Yeon Baek, Hanyang Univ. (South Korea)


Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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