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Proceedings Paper

TiSix as a new embedded material for attenuated phase-shift mask
Author(s): Wen-An Loong; Tzu-ching Chen; Shyi-Long Shy; Jin-chi Tseng; Ren-Jang Lin
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Paper Abstract

In this paper, TiSix as a new material suitable for using as an embedded layer for an attenuated phase shift mask (APSM) is presented. TiSix thin film was formed by plasma sputtering under Ar gas of 26 sccm. The related characteristics of TiSix at 365 nm (i-line) wavelength are as follows: n (refractive index) approximately 3.6; k (extinction coefficient) approximately 1.2; R percent (reflection) approximately 36, (rho) (resistivity 1.0 approximately 8.3 (mu) (Omega) -cm (depends on substrate). For required phase shift degree (theta) equals 180 degrees, calculated thickness d180 is 3.6 which is suitable for APSM. T percent under visible wavelength at thickness d180 is 14 approximately 17 which is suitable for mask's alignment by laser beam. TiSix film has good electrical conductivity, therefore, suitable for e-beam direct-write in patterning mask. TiSix film is also highly resistant to strong acid, suitable for fabrication of mask.

Paper Details

Date Published: 7 June 1996
PDF: 7 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240969
Show Author Affiliations
Wen-An Loong, National Chiao Tung Univ. (Taiwan)
Tzu-ching Chen, National Chiao Tung Univ. (Taiwan)
Shyi-Long Shy, National Nano Device Lab. (Taiwan)
Jin-chi Tseng, National Chiao Tung Univ. (Taiwan)
Ren-Jang Lin, National Chiao Tung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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