Share Email Print

Proceedings Paper

Efficient all-solid state 213-nm laser source for microlithography
Author(s): Shigeo R. Kubota; Werner Wiechmann; Ling Yi Liu; Michio Oka; Hiroki Kikuchi; Hiroshi Suganuma; Hisashi Masuda; Minoru Takeda
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We describe a 0.4W average power at maximum, frequency-quintupled Q-switched Nd:YAG laser at a repetition rate of 7 kHz, which is a potential light source for next generation microlithography. Calculated results for the conversion efficiencies considering pump depletion will be discussed. Our results allow to foresee further scaling up 213 nm power up to the 1W level by increasing the fundamental power.

Paper Details

Date Published: 7 June 1996
PDF: 6 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240946
Show Author Affiliations
Shigeo R. Kubota, Sony Corp. (Japan)
Werner Wiechmann, Sony Corp. (Japan)
Ling Yi Liu, Sony Corp. (Japan)
Michio Oka, Sony Corp. (Japan)
Hiroki Kikuchi, Sony Corp. (Japan)
Hiroshi Suganuma, Sony Corp. (Japan)
Hisashi Masuda, Sony Corp. (Japan)
Minoru Takeda, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

© SPIE. Terms of Use
Back to Top