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Proceedings Paper

Challenges to depth-of-focus enhancement with a practical super-resolution technique
Author(s): Tohru Ogawa; Masaya Uematsu; Koichi Takeuchi; Atsushi Sekiguchi; Tatsuji Oda
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Paper Abstract

A new technique, which combines weak quadrupole illumination and an attenuated phase- shifting mask, has been developed. 0.03 micrometers lithography with i-line can be performed with this technique. It is also confirmed that KrF excimer laser lithography is a powerful candidate for generating 0.18 micrometers -rule devices.

Paper Details

Date Published: 7 June 1996
PDF: 12 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240934
Show Author Affiliations
Tohru Ogawa, Sony Corp. (Japan)
Masaya Uematsu, Sony Corp. (Japan)
Koichi Takeuchi, Sony Corp. (Japan)
Atsushi Sekiguchi, Sony Corp. (Japan)
Tatsuji Oda, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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