Proceedings Paper
Observation of multiphoton photoemission from a NEA GaAs photocathode| Format | Member Price | Non-Member Price |
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Paper Abstract
Cubic responses in photoelectron emission from a , 02 activated GaAs layer,
illuminated by a Q-switched Er ,Thi,Ho : YLF laser ( 2 .O6um) both at room temperature
and at liquid nitrogen temperature ( 77K ) were investigated . Photocurrent density
proportional to the cubic of intensity of incident light over three orders of magnitude
at both temperatures shows not only thatthe electron emission is three-photon
photoemission, but also that thermal emission is nebligible at room temperature in
our case. The photoemissive current from a P-type monocrystal GaAs substrate activated
only by caesium shows six power dependence on light intensity . Comparisons of
measured three-photon photoemission coefficient of GaAs(Cs,02) with a theoretical
estimated values and with four-photon photoemission coefficient of a Cs3Sb photocathode
are given.
Paper Details
Date Published: 1 April 1991
PDF: 5 pages
Proc. SPIE 1358, 19th Intl Congress on High-Speed Photography and Photonics, (1 April 1991); doi: 10.1117/12.24093
Published in SPIE Proceedings Vol. 1358:
19th Intl Congress on High-Speed Photography and Photonics
Peter W. W. Fuller, Editor(s)
PDF: 5 pages
Proc. SPIE 1358, 19th Intl Congress on High-Speed Photography and Photonics, (1 April 1991); doi: 10.1117/12.24093
Show Author Affiliations
Liming Wang, Xian Institute of Optics and Precision Mechanics (China)
Xun Hou, Xian Institute of Optics and Precision Mechanics (China)
Xun Hou, Xian Institute of Optics and Precision Mechanics (China)
Zhao Cheng, Xian Institute of Optics and Precision Mechanics (China)
Published in SPIE Proceedings Vol. 1358:
19th Intl Congress on High-Speed Photography and Photonics
Peter W. W. Fuller, Editor(s)
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