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Proceedings Paper

Evaluation of proximity effects using three-dimensional optical lithography simulation
Author(s): Chris A. Mack
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Paper Abstract

The use of optical lithography modeling as a tool for evaluating proximity effects is described. An extension of the critical dimension error for a one-dimensional mask feature to a critical shape error for a two-dimensional mask feature is presented. Simulation is applied to the evaluation of mask shaping (also called optical proximity correction) using the critical shape error as a metric.

Paper Details

Date Published: 7 June 1996
PDF: 6 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240928
Show Author Affiliations
Chris A. Mack, FINLE Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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