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Proceedings Paper

Lithography model tuning: matching simulation to experiment
Author(s): Stephen H. Thornton; Chris A. Mack
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Paper Abstract

A method is presented for adjusting the input parameters of a lithography simulator to more accurately match a given set of experimental conditions. Using a dose-to-clear swing curve on bare silicon, the index of refraction of the photoresist is adjusted to account for relative resist thickness measurements made in the fab. The resist exposure rate constant C can be adjusted to account for dose calibration differences, or these differences could be included in the development parameters. The develop parameters can be tuned using the exposure margin, or a measurement technique called the Poor Man's DRM could be used to measure a new set of development parameters. Results of these tuning procedures are presented and the tuned set of parameters is shown to give good quantitative agreement of simulation to experiment.

Paper Details

Date Published: 7 June 1996
PDF: 13 pages
Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240908
Show Author Affiliations
Stephen H. Thornton, Advanced Micro Devices, Inc. (United States)
Chris A. Mack, FINLE Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 2726:
Optical Microlithography IX
Gene E. Fuller, Editor(s)

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