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Proceedings Paper

Conception of optimal designing of optical column for ion projection lithography
Author(s): Stanislav N. Jatchmenev; Alexander A. Chinenov
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Paper Abstract

General theoretical schemes have been detailed for the designing of the ion projection lithography systems, using the results of preceding theoretical investigations. The designing is on the basis of simulation modeling by splitting off critical conditions and using known regularity of formation optical characteristics. The initial step of an investigation begins with the search of optimum configuration with respect to distortion as the most critical parameter. It is finding a corresponding configuration given reduction in the best way. Introduction of some additional degrees of freedom in two lenses projector makes tuning to required magnification coefficient possible. Then the problem of paraxiality for a system whole is solved. Large attention is given to research of the different collateral phenomena. Accounting all potential sources of perturbations is used for an individual tolerances. The contrast function is calculated for the required resolution.

Paper Details

Date Published: 27 May 1996
PDF: 13 pages
Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240498
Show Author Affiliations
Stanislav N. Jatchmenev, RIMOS Joint-Stock Co. (Russia)
Alexander A. Chinenov, RIMOS Joint-Stock Co. (Russia)

Published in SPIE Proceedings Vol. 2723:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI
David E. Seeger, Editor(s)

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