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Proceedings Paper

Silicon oxide deposition using a gallium-focused ion beam
Author(s): Haruki Komano; Hiroko Nakamura; Mitsuyo Kariya; Munehiro Ogasawara
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Paper Abstract

Experiments concerning silicon oxide deposition using a focused ion beam were carried out in order to apply silicon oxide as insulator in integrated circuit modification. Silicon oxide film was formed using a 25-keV gallium focused ion beam with a mixed gas of 1.3.5.7- tetramethylcyclotetrasiloxane and oxygen. The deposited film consisted of mainly silicon and oxygen, which was analyzed by micro-Auger electron spectroscopy. It also contained 5 percent gallium, but carbon content was below noise level. The ratio of silicon to oxygen was 1 to 2. It was found that carbon content depended on oxygen used as deposition source gas. The resistivities of the eight deposited silicon oxide films were measured. The resistivities wer 28-79 M(Omega) cm at 5 volts and these values did not change significantly even after the samples were left in a room for three months. It was determined that it will be possible to use deposited silicon oxide for integrated circuit modification.

Paper Details

Date Published: 27 May 1996
PDF: 8 pages
Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240495
Show Author Affiliations
Haruki Komano, Toshiba Corp. (Japan)
Hiroko Nakamura, Toshiba Corp. (Japan)
Mitsuyo Kariya, Toshiba Corp. (Japan)
Munehiro Ogasawara, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 2723:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI
David E. Seeger, Editor(s)

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