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Proceedings Paper

X-ray mask image-placement studies at the Microlithography Mask Development Center
Author(s): Denise M. Puisto; Mark Lawliss; Thomas B. Faure; Janet M. Rocque; Kurt R. Kimmel; Douglas E. Benoit
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Paper Abstract

A continuing trend in X-ray lithography is the requirement for high accuracy masks. Image placement, or the ability to pattern images in the correct locations, is one of the most critical requirements. It is driven by a number of parameters, including the electron-beam lithography system and precision of the metrology system. Also, because the X-ray mask substrate consists of a thin membrane, it is very susceptible to the stresses of the resist film, absorber material, and plating base. An extensive analysis of the contributors to image placement was performed to determine the relative contribution of each. This analysis highlighted those contributors which caused the largest distortions and which, therefore, presented the most opportunities for improvement. Several changes were then implemented which resulted in a 50 percent overall improvement to placement of the X-ray mask images. The experimental design and detailed results are discussed.

Paper Details

Date Published: 27 May 1996
PDF: 7 pages
Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240472
Show Author Affiliations
Denise M. Puisto, Loral Federal Systems (United States)
Mark Lawliss, Loral Federal Systems (United States)
Thomas B. Faure, Loral Federal Systems (United States)
Janet M. Rocque, Loral Federal Systems (United States)
Kurt R. Kimmel, Loral Federal Systems (United States)
Douglas E. Benoit, Loral Federal Systems (United States)

Published in SPIE Proceedings Vol. 2723:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI
David E. Seeger, Editor(s)

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