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Proceedings Paper

Comparison of nodular defect seed geometries from different deposition techniques
Author(s): Christopher J. Stolz; Robert J. Tench; Mark R. Kozlowski; Anne Fornier
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Paper Abstract

A focused ion-beam milling instrument, commonly utilized in the semiconductor industry for failure analysis and IC repair, is capable of cross-sectioning nodular defects. Utilizing the instrument's scanning on beam, high-resolution imaging of the seeds that initiate nodular defect growth is possible. In an attempt to understand the origins of these seeds, HfO2/SiO2 and Ta2O5/SiO2 coatings were prepared by a variety of coating vendors and different deposition processes including e-beam, magnetron sputtering, and ion beam sputtering. By studying the shape, depth, and composition of the seed, inferences of its origin can be drawn. The boundaries between the nodule and thin film provide insight into the mechanical stability of the nodule. Significant differences in the seed composition, geometry of nodular growth and mechanical stability of the defects for sputtered versus e-beam coatings are reported. Differences in seed shape were also observed from different coating vendors using e-beam deposition of HfO2/SiO2 coatings.

Paper Details

Date Published: 27 May 1996
PDF: 9 pages
Proc. SPIE 2714, 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995, (27 May 1996); doi: 10.1117/12.240402
Show Author Affiliations
Christopher J. Stolz, Lawrence Livermore National Lab. (United States)
Robert J. Tench, Lawrence Livermore National Lab. (United States)
Mark R. Kozlowski, Lawrence Livermore National Lab. (United States)
Anne Fornier, CEA/Ctr. d'Etudes de Limeil-Valenton (France)

Published in SPIE Proceedings Vol. 2714:
27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995
Harold E. Bennett; Arthur H. Guenther; Mark R. Kozlowski; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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