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Proceedings Paper

Subhalf-micron polysilicon gate control from 365- to 193-nm exposure
Author(s): Brian Martin; Graham G. Arthur
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Paper Abstract

Calculations using lithography modeling programs are described to measure the variation in linewidth in polysilicon gates which pass over typical active area topography. All linewidths are calculated in the resist image, with and without top and bottom anti-reflective coatings, and range from 0.4 micrometer at 365 nm to 0.225 micrometer at 193 nm exposure.

Paper Details

Date Published: 21 May 1996
PDF: 11 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996);
Show Author Affiliations
Brian Martin, GEC Plessey Semiconductors Ltd. (United Kingdom)
Graham G. Arthur, Rutherford Appleton Lab. (United Kingdom)

Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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