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Proceedings Paper

Improving SEM linewidth metrology by two-dimensional scanning force microscopy
Author(s): Mark D. Lagerquist; Wayne Bither; Roger Brouillette
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Paper Abstract

As lithographic feature sizes in semiconductor fabrication shrink, sidewall shape comprises a greater percentage of the overall linewidth. Scanning electron microscope (SEM) metrology thereby becomes more dependent on geometry. To determine SEM sensitivity to sidewall behavior, samples are cleaved and compared to cross-sectional SEM measurements. Two- dimensional scanning force microscopy (2D-SFM), which uses unique probes and scan control to profile steep and complex sidewall geometries, shows promise as an alternative to the destructive and costly cross-sectioning technique. Repeatability studies on a variety of lithographic features show 2D-SFM capability and feasibility as a linewidth metrology tool, demonstrating less than 10 nm 3-sigma precision. Several application scenarios are examined where 2D-SFM measurements are compared to SEM measurements. The results demonstrate 2D-SFM can complement and improve SEM linewidth measurement understanding.

Paper Details

Date Published: 21 May 1996
PDF: 10 pages
Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996);
Show Author Affiliations
Mark D. Lagerquist, IBM Microelectronics Div. (United States)
Wayne Bither, IBM Microelectronics Div. (United States)
Roger Brouillette, IBM Microelectronics Div. (United States)

Published in SPIE Proceedings Vol. 2725:
Metrology, Inspection, and Process Control for Microlithography X
Susan K. Jones, Editor(s)

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