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Proceedings Paper

Absorption and refractive nonlinearity in heavily doped A3B5 semiconductors below the fundamental absorption edge
Author(s): Ilya A. Utkin; Fedor V. Karpushko; V. L. Malevich; George V. Sinitsyn
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Paper Abstract

Nonlinear optical absorption in heavily doped n-GaAs and n-InP has been studied experimentally in a nanosecond time scale. Theoretical description of the nonlinear absorption is given that takes into account band-filling, band-gap renormalization and Coulomb screening effects. The results of experimental investigation of self-diffraction effect observed in these semiconductors are presented.

Paper Details

Date Published: 6 May 1996
PDF: 6 pages
Proc. SPIE 2796, ICONO '95: Fundamentals of Laser-Matter Interaction, (6 May 1996); doi: 10.1117/12.239762
Show Author Affiliations
Ilya A. Utkin, Div. for Optical Problems in Information Technologies (Belarus)
Fedor V. Karpushko, Div. for Optical Problems in Information Technologies (Belarus)
V. L. Malevich, Div. for Optical Problems in Information Technologies (Belarus)
George V. Sinitsyn, Div. for Optical Problems in Information Technologies (Belarus)


Published in SPIE Proceedings Vol. 2796:
ICONO '95: Fundamentals of Laser-Matter Interaction
Konstantin N. Drabovich; Nikolai I. Koroteev, Editor(s)

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