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Proceedings Paper

Formation of defects in CdTe doped by Vanadium
Author(s): Alexander E. Belyaev; L. A. Mischenko; Moisey K. Sheinkman
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Paper Abstract

Electrical and optical properties of CdTe doped by Vanadium in the concentration range from 5.1018cm-3 to 5.1019cm-3 are studied with the use of a set of experimental methods: EPR, photoluminescence, photoconductivity, and thermostimulated conductivity. It is shown that doping CdTe by Vanadium leads to formation of defect that manifests itself as deep donor center with optical and thermal activation energies equal to 1.30 eV and 0.71 eV respectively.

Paper Details

Date Published: 29 April 1996
PDF: 4 pages
Proc. SPIE 2795, Nonlinear Optics of Liquid and Photorefractive Crystals, (29 April 1996); doi: 10.1117/12.239219
Show Author Affiliations
Alexander E. Belyaev, Institute of Semiconductor Physics (Ukraine)
L. A. Mischenko, Institute of Semiconductor Physics (Ukraine)
Moisey K. Sheinkman, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 2795:
Nonlinear Optics of Liquid and Photorefractive Crystals
Gertruda V. Klimusheva; Andrey G. Iljin, Editor(s)

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