Dynamical behavior of a four-stripe array of semiconductor lasers is modeled in time and across the transverse spatial dimension for different values of the injection current, various current and carrier diffusion rates, and different spacings of the stripes, including the limit in which the lasing regions merge giving a single broad-stripe laser. Various stages of the dynamics are revealed as a function of the coupling strength, ranging from quasi-independent operation of the oscillators under weak coupling of the oscillators through chaotic modulation under moderate coupling and finally into the formation of stable or modulated broad area transverse modes under strong coupling.

Date Published: 1 May 1996
PDF: 5 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238972

Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)