The formation of contacts by means of indium, aluminum, tin and indium-tin-oxide (ITO) to n-type ZnSe layers grown by MBE has been investigated using x-ray-photoelectron- spectroscopy (XPS) and current-voltage (I-V) techniques. Quite different behavior was found for metal contacts compared to ITO. For the latter it is possible to form ohmic contacts for ZnSe doping levels in the range of n equals 2 multiplied by 10¹⁷ to 3.5 multiplied by 10¹⁸ cm^-3 with specific contact resistances as low as R_c equals 9 multiplied by 10^-3 (Omega) cm². Whereas metal contacts behave according to thermionic emission theory with nonlinear I-V-curves depending on the doping level of ZnSe epilayers.

Date Published: 1 May 1996
PDF: 9 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238969

Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)