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Proceedings Paper

Investigation of electrical properties and thermal stability of ohmic contacts to n-ZnSe for planar contacts on blue-green laser diodes
Author(s): Karl Schuell; Wolfgang Spahn; V. Hock; U. Lunz; M. Ehinger; Wolfgang Faschinger; Gottfried Landwehr
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Paper Abstract

The formation of contacts by means of indium, aluminum, tin and indium-tin-oxide (ITO) to n-type ZnSe layers grown by MBE has been investigated using x-ray-photoelectron- spectroscopy (XPS) and current-voltage (I-V) techniques. Quite different behavior was found for metal contacts compared to ITO. For the latter it is possible to form ohmic contacts for ZnSe doping levels in the range of n equals 2 multiplied by 1017 to 3.5 multiplied by 1018 cm-3 with specific contact resistances as low as Rc equals 9 multiplied by 10-3 (Omega) cm2. Whereas metal contacts behave according to thermionic emission theory with nonlinear I-V-curves depending on the doping level of ZnSe epilayers.

Paper Details

Date Published: 1 May 1996
PDF: 9 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238969
Show Author Affiliations
Karl Schuell, Univ. Wuerzburg (Germany)
Wolfgang Spahn, Univ. Wuerzburg (Germany)
V. Hock, Univ. Wuerzburg (Germany)
U. Lunz, Univ. Wuerzburg (Germany)
M. Ehinger, Univ. Wuerzburg (Germany)
Wolfgang Faschinger, Univ. Wuerzburg (Germany)
Gottfried Landwehr, Univ. Wuerzburg (Germany)

Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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