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Proceedings Paper

Exciton tunneling in wide-bandgap semiconductors
Author(s): Sergey Yu. Ten; Fritz Henneberger; Michael Rabe; Nasser Peyghambarian
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Paper Abstract

We have studied exciton tunneling in (Zn,Cd)Se/ZnSe asymmetric double quantum wells using femtosecond time resolved transmission, photoluminescence and time-resolved photoluminescence measurements. The strong Coulomb correlation as well as Frohlich electron LO-phonon interaction in II-VI semiconductors make the tunneling process significantly different from that in III-VI structures. We observe fast (1 ps) exciton tunneling out of the narrow well, although LO-phonon scattering is forbidden for holes in a single- particle picture. However, our theoretical analysis shows that tunneling of the exciton as a whole entity with the emission of only one LO-phonon is very slow. Instead, the exciton tunnels via an indirect state in a two-step process whose efficiency is dramatically enhanced by Coulomb effects.

Paper Details

Date Published: 1 May 1996
PDF: 7 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996);
Show Author Affiliations
Sergey Yu. Ten, Optical Sciences Ctr./Univ. of Arizona (United States)
Fritz Henneberger, Humboldt-Univ. zu Berlin (Germany)
Michael Rabe, Humboldt-Univ. zu Berlin (Germany)
Nasser Peyghambarian, Optical Sciences Ctr./Univ. of Arizona (United States)


Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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