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Proceedings Paper

Highly nondegenerate four-wave mixing in semiconductor laser amplifiers
Author(s): Antonio Mecozzi; A. D'Ottavi; F. Martelli; S. Scotti; Paolo Spano; R. Dall'Ara; J. Eckner; George Guekos
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Paper Abstract

We present theory and experiments of four-wave mixing in bulk-semiconductor amplifiers. The theory includes bimolecular and auger recombinations. We show experimentally conversion efficiency larger than unit up to 2 THz frequency shift. We measure a signal-to- background ratio compatible with that required by practical applications as frequency converters. The high efficiency of the four-wave mixing process permits the investigation of the carrier dynamics down to an equivalent time resolution of the order of few tens of femtoseconds.

Paper Details

Date Published: 1 May 1996
PDF: 15 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238964
Show Author Affiliations
Antonio Mecozzi, Fondazione Ugo Bordoni (Italy)
A. D'Ottavi, Fondazione Ugo Bordoni (Italy)
F. Martelli, Fondazione Ugo Bordoni (Italy)
S. Scotti, Fondazione Ugo Bordoni (Italy)
Paolo Spano, Fondazione Ugo Bordoni (Italy)
R. Dall'Ara, Swiss Federal Institute of Technology (Switzerland)
J. Eckner, Swiss Federal Institute of Technology (Switzerland)
George Guekos, Swiss Federal Institute of Technology (Switzerland)

Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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