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Proceedings Paper

Theory of non-Markovian optical gain in excited semiconductors
Author(s): Do-Yeol Ahn
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Paper Abstract

The optical gain of a quantum-well laser is studied taking into account the valence-band mixing, non-Markovian relaxation and the many-body effects. Conventional gain spectra calculated with the Lorentzian line shape function show two anomalous phenomena: unnatural absorption region below the band-gap energy and mismatch of the transparency point in the gain spectra with the Fermi-level separation, the latter suggesting that the carriers and the photons are not in thermal (or quasi) equilibrium. It is shown that the non-Markovian gain model with many-body effects removes the two anomalies associated with the Lorentzian line shape function with the proper choice of the correlation time.

Paper Details

Date Published: 1 May 1996
PDF: 12 pages
Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); doi: 10.1117/12.238961
Show Author Affiliations
Do-Yeol Ahn, LG Electronics Research Ctr. (South Korea)

Published in SPIE Proceedings Vol. 2693:
Physics and Simulation of Optoelectronic Devices IV
Weng W. Chow; Marek Osinski, Editor(s)

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