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Proceedings Paper

Resonant-cavity avalanche photodiodes and narrow spectral response photodiodes
Author(s): K. Alex Anselm; Suhail S. Murtaza; Ben G. Streetman; Joe C. Campbell
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Paper Abstract

The performance of conventional photodiodes is limited by an intrinsic tradeoff between quantum efficiency and bandwidth. We have successfully demonstrated that resonant-cavity photodiodes can simultaneously achieve high quantum efficiency and wide bandwidths. The resonant-cavity approach increases the absorption through multiple reflections between two parallel mirrors. In addition, the wavelength selective spectral response offers potential advantages for applications where filtering is needed such as wavelength division multiplexing. In this paper, we report on a resonant-cavity, separate absorption and multiplication avalanche photodiode (APD). An avalanche gain of more than 40 has been obtained. The peak external quantum efficiency was measured to be approximately 80% at 890 nm with a spectral response linewidth of less than 7 nm. Without cavity enhancement, the efficiency of these APDs would be less than 5% because the absorbing layer is only 500 angstroms thick. The structure was designed to provide electron injection into the multiplication region because we have determined experimentally that for Al0.4Ga0.6As, the electron ionization coefficient is larger than that of the hole. Based on the conventional formulation for excess noise, the ratio of ionization coefficients is as low as (beta) /(alpha) equals 0.2.

Paper Details

Date Published: 1 May 1996
PDF: 5 pages
Proc. SPIE 2690, Wavelength Division Multiplexing Components, (1 May 1996); doi: 10.1117/12.238913
Show Author Affiliations
K. Alex Anselm, Univ. of Texas/Austin (United States)
Suhail S. Murtaza, Univ. of Texas/Austin (United States)
Ben G. Streetman, Univ. of Texas/Austin (United States)
Joe C. Campbell, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 2690:
Wavelength Division Multiplexing Components
Louis S. Lome, Editor(s)

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