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Proceedings Paper

Modeling of optically switched resonant tunneling diodes
Author(s): Paul Sotirelis; Dejan Jovanovic; Vijit Sabnis; Theodore S. Moise
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Paper Abstract

We simulate the current-voltage characteristics of an InGaAs/AlAs resonant-tunneling diode under dark and illuminated conditions. The current is given by a tunneling formula that has been generalized to allow for quantum mechanical effects in the contacts. The optically generated carriers effect on the current-voltage characteristic is included through the use of a rate equation. This method of determining the optical response is shown to be accurate at low intensity and useful for extracting the recombination lifetime. The existing simulator shows great promise as a design tool for optical RTDs and related devices.

Paper Details

Date Published: 19 April 1996
PDF: 10 pages
Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); doi: 10.1117/12.238390
Show Author Affiliations
Paul Sotirelis, Texas Instruments Inc. (United States)
Dejan Jovanovic, Texas Instruments Inc. (United States)
Vijit Sabnis, Texas Instruments Inc. (United States)
Theodore S. Moise, Texas Instruments Inc. (United States)

Published in SPIE Proceedings Vol. 2694:
Quantum Well and Superlattice Physics VI
Gottfried H. Doehler; Theodore S. Moise, Editor(s)

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