
Proceedings Paper
Microcharacterization of semiconductor laser diodes: materials and devicesFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
This paper illustrates the application of microscopy techniques to investigate various material processing and device-related problems that one encounters in the development of semiconductor laser diodes. General comments are made concerning local characterization of semiconductors. Various laser reliability/degradation issues are addressed. As an example of how microscopy techniques facilitate the building of modern lasers, the application of the ordering phenomenon is discussed.
Paper Details
Date Published: 8 April 1996
PDF: 11 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238185
Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)
PDF: 11 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238185
Show Author Affiliations
Abram Jakubowicz, IBM Research Div./Zurich Research Lab. (Switzerland)
Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)
© SPIE. Terms of Use
