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Proceedings Paper

Mixing in group-V sublattice of GaAs-related crystals
Author(s): Ewa Beata Radojewska; Ewa Placzek-Popko
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Paper Abstract

III-V mixed crystals are interesting for their application in modern optoelectronics and microwave electronics. Two mixed systems, namely GaAs1-xSbx and GaAs1-x- ySbxPy, were chosen to investigate an influence of gallium phosphite and gallium antimonide added to gallium arsenide on band structure properties and crystal lattice structure.

Paper Details

Date Published: 8 April 1996
PDF: 3 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238146
Show Author Affiliations
Ewa Beata Radojewska, Technical Univ. of Wroclaw (Poland)
Ewa Placzek-Popko, Technical Univ. of Wroclaw (Poland)

Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)

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